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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 8.0 3.0 MAX. 1500 800 12 30 45 5.0 4.0 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 9 45 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W 1 Turn-off current. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO Reb BVEBO VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 6.0 V; IC = 0 A VEB = 6.0 V IB = 600 mA IB=0A ;Ic = 100mA L = 25 mH IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V IF = 8 A MIN. 72 7.5 800 5 - TYP. 110 55 13.5 11 7 1.6 MAX. 1.0 2.0 218 5.0 1.1 9.5 2.0 UNIT mA mA mA V V V V V Emitter cut-off current Base-emitter resistance Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Vfr tfr Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 8.0 A; LC = 260 H; Cfb = 13 nF; IB(end) = 1.1 A; LB = 2.5 H; -VBB = 4 V; (-dIB/dt = 1.6 A/s) TYP. 145 MAX. UNIT pF 3.0 0.2 16 410 4.0 0.35 - s s V ns IF = 8 A; dIF/dt = 50 A/s VF = 5 V 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB IBend t 10us 13us D.U.T. IBend LB Cfb Rbe 32us VCE -VBB t Fig.1. Switching times waveforms. Fig.4. Switching times test circuit. ICsat 90 % IC 100 hFE BU2525DF Tj = 25 C Tj = 125 C 5V 10 % tf ts IB IBend t 10 1V t 1 0.1 1 10 IC / A 100 - IBM Fig.2. Switching times definitions. Fig.5. Typical DC current gain. hFE = f (IC) parameter VCE I F I F 1.2 1.1 1 VBESAT / V Tj = 25 C Tj = 125 C BU2525AF 10% t fr V F time 0.9 0.8 0.7 0.6 IC/IB= 3 4 5 0.1 1 IC / A 10 5V V F time V fr 0.5 0.4 Fig.3. Definition of anti-parallel diode Vfr and tfr Fig.6. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB September 1997 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF 1 0.9 0.8 0.7 0.6 0.5 VCESAT / V IC/IB = 5 4 3 BU2525AF 1000 Eoff / uJ IC = 8 A BU2525AF 7A 100 Tj = 25 C 0.4 0.3 0.2 0.1 0 0.1 Tj = 125 C 1 IC / A 10 100 10 0.1 1 IB / A 10 Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.10. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 32 kHz 1.2 1.1 1 0.9 VBESAT / V Tj = 25 C Tj = 125 C BU2525AF IC= 0.8 0.7 0.6 0 1 2 IB / A 3 8A 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525AF ts IC = 8A 7A 0.1 1 IB / A tf 10 Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC Fig.11. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz Normalised Power Derating with heatsink compound 10 VCESAT / V BU2525AF Tj = 25 C Tj = 125 C 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% 8A 1 6A 5A IC = 4 A 0.1 0.1 1 IB / A 10 0 20 40 60 80 Ths / C 100 120 140 Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) September 1997 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF 10 Zth / (K/W) BU2525AF IC / A 100 BU2525AF tp = 1 0.5 0.2 0.1 0.05 0.02 ICM = 0.01 40 us ICDC P D tp D= tp T t 0.1 10 100 us 0.01 D=0 0.001 1E-06 1E-04 1E-02 t/s T 1E+00 Fig.13. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Ptot 1 1 ms 0.1 10 ms DC 0.01 1 10 100 1000 VCE / V Fig.14. Forward bias safe operating area. Ths = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.200 |
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